Abstract: To obtain ZnO nanorod arrays which have good UV emission characteristics，reports a simple and effective method for fabricating and patterning highly ordered ZnO nanorod arrays on H₂-decomposed GaN film，using aqueous solution at low temperatures（105 ℃）. The prepared samples were characterized the microstructure and morphology. The effects of hydrogen corrosion treatment have been studied by comparative experiment. The results show that the H₂-decomposed GaN film substrate is conducive to the formation of a dense，uniform，hexagonal pattern of oriented ZnO，which is consistent with the screw dislocation growth mechanism.

Key words: ZnO nanorod, GaN film, hexagon